Titanium wire (Aldrich, 99.7%) with diameter 0.81 mm was used as a substrate for the coatings. The Ti surface was pretreated immediately before coating; it was abraded with silicon carbide paper CC-320Aw and CC-1200Aw and then etched in a solution of NH 4 F (80 g l −1)+ H 2 SO 4 (100 g l −1) for 15 min. Finally, it was rinsed well with
The divacancy in 4H-SiC, which is the main subject of this work, consists of carbon (V C ) and silicon (V Si ) vacancies positioned on neighboring lattice sites (denoted hereafter as VV for brevity).
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Changes and challenges of photovoltaic inverter with silicon carbide device. This paper is helpful for the research and development of next-generation SiC-based inverters for.
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